Job Description
About Texas Instruments
At TI, we engineer the future — one silicon innovation at a time. Our power management portfolio powers everything from electric vehicles to data centers, and now we're
doubling down on Gallium Nitride (GaN)
— the technology redefining what's possible in high-efficiency power conversion.
About the Role
We are assembling an elite team to design
next-generation, high-efficiency GaN power stage ICs . As a
GaN Power Architect , you will lead the full-stack execution — from silicon architecture to bench validation — of
high-speed, high-voltage GaN gate drivers and integrated power stage building blocks .
You will be the critical bridge between
advanced GaN semiconductor device physics
and
precision analog circuit design , driving breakthroughs in switching frequency, power density, and thermal performance.
What You'll Do
⚙️ Analog IC Design
Architect, design, and simulate custom analog and mixed-signal blocks for GaN power ICs Design high-speed gate drivers, level shifters, bootstrap circuits, UVLO, thermal shutdown, and fast overcurrent protection circuits
Silicon-Device Co-Design
Partner with device physics experts to model and optimize driver-device interaction Account for dynamic R_DSon, current collapse, gate-charge (Q_g) characteristics, and 2DEG behavior
⚡ Transient & Parasitic Management
Engineer robust circuits capable of withstanding extreme
dV/dt (>100V/ns)
and
di/dt
transients Prevent false turn-on, shoot-through, and gate breakdown with surgical precision
Layout & Co-Extraction
Collaborate with layout engineers for
parasitics-aware design
(PEEC/EM extraction) Optimize ultra-low inductance driver loops and power interconnects
Silicon Validation
Lead bench characterization and debug of
first-silicon
in the lab Validate switching dynamics, efficiency curves, protection response times, and thermal boundaries
What You Bring
✅
Education & Experience:
B.S., M.S., or Ph.D. in Electrical Engineering (or related) with
5+ years
of hands-on analog/mixed-signal IC design experience in high-voltage or wide-bandgap (WBG) power management ✅
Solid Analog Design Fundamentals
— the kind that comes from doing, not just studying ✅
GaN Driver Expertise:
Proven track record designing high-speed, high-voltage gate drivers for GaN HEMTs (discrete or monolithically integrated) ✅
GaN Device Physics:
Deep understanding of V_th stability, gate degradation, Q_rr-equivalent loss mechanisms, dynamic R_DSon, and 2DEG physics ✅
EDA Proficiency:
Expert-level use of
Cadence Virtuoso, Spectre/Spectre21, Calibre (DRC/LVS/PEX) , and parasitic extraction workflows for high-frequency/high-power layouts ✅
Lab & Debug Skills:
Hands-on with high-bandwidth oscilloscopes, differential probes, and
double-pulse testing
setups
Bonus Points If You Have
⭐ Working knowledge of switching converter topologies — multiphase buck, resonant LLC, boost, or active clamp flyback ⭐ Experience with ultra-low inductance power packaging — QFN, flip-chip, embedded dies, or multi-chip modules ⭐ Exposure to volume GaN manufacturing, DFT, and high-reliability applications
Why TI? Work on technology that powers the world's most critical systems Access to world-class semiconductor fabrication and R&D resources Collaborative culture where engineers lead innovation — not just execute it Competitive compensation, benefits, and long-term career growth
At TI, we engineer the future — one silicon innovation at a time. Our power management portfolio powers everything from electric vehicles to data centers, and now we're
doubling down on Gallium Nitride (GaN)
— the technology redefining what's possible in high-efficiency power conversion.
About the Role
We are assembling an elite team to design
next-generation, high-efficiency GaN power stage ICs . As a
GaN Power Architect , you will lead the full-stack execution — from silicon architecture to bench validation — of
high-speed, high-voltage GaN gate drivers and integrated power stage building blocks .
You will be the critical bridge between
advanced GaN semiconductor device physics
and
precision analog circuit design , driving breakthroughs in switching frequency, power density, and thermal performance.
What You'll Do
⚙️ Analog IC Design
Architect, design, and simulate custom analog and mixed-signal blocks for GaN power ICs Design high-speed gate drivers, level shifters, bootstrap circuits, UVLO, thermal shutdown, and fast overcurrent protection circuits
Silicon-Device Co-Design
Partner with device physics experts to model and optimize driver-device interaction Account for dynamic R_DSon, current collapse, gate-charge (Q_g) characteristics, and 2DEG behavior
⚡ Transient & Parasitic Management
Engineer robust circuits capable of withstanding extreme
dV/dt (>100V/ns)
and
di/dt
transients Prevent false turn-on, shoot-through, and gate breakdown with surgical precision
Layout & Co-Extraction
Collaborate with layout engineers for
parasitics-aware design
(PEEC/EM extraction) Optimize ultra-low inductance driver loops and power interconnects
Silicon Validation
Lead bench characterization and debug of
first-silicon
in the lab Validate switching dynamics, efficiency curves, protection response times, and thermal boundaries
What You Bring
✅
Education & Experience:
B.S., M.S., or Ph.D. in Electrical Engineering (or related) with
5+ years
of hands-on analog/mixed-signal IC design experience in high-voltage or wide-bandgap (WBG) power management ✅
Solid Analog Design Fundamentals
— the kind that comes from doing, not just studying ✅
GaN Driver Expertise:
Proven track record designing high-speed, high-voltage gate drivers for GaN HEMTs (discrete or monolithically integrated) ✅
GaN Device Physics:
Deep understanding of V_th stability, gate degradation, Q_rr-equivalent loss mechanisms, dynamic R_DSon, and 2DEG physics ✅
EDA Proficiency:
Expert-level use of
Cadence Virtuoso, Spectre/Spectre21, Calibre (DRC/LVS/PEX) , and parasitic extraction workflows for high-frequency/high-power layouts ✅
Lab & Debug Skills:
Hands-on with high-bandwidth oscilloscopes, differential probes, and
double-pulse testing
setups
Bonus Points If You Have
⭐ Working knowledge of switching converter topologies — multiphase buck, resonant LLC, boost, or active clamp flyback ⭐ Experience with ultra-low inductance power packaging — QFN, flip-chip, embedded dies, or multi-chip modules ⭐ Exposure to volume GaN manufacturing, DFT, and high-reliability applications
Why TI? Work on technology that powers the world's most critical systems Access to world-class semiconductor fabrication and R&D resources Collaborative culture where engineers lead innovation — not just execute it Competitive compensation, benefits, and long-term career growth
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