Job Description
Senior Memory Design Engineer
Location:
Bengaluru Experience:
5–10 Years Job Type:
Full-time Role Overview We are looking for a
Senior Memory Design Engineer
to drive circuit-level design and optimization of advanced memory macros. The role requires strong expertise in
SRAM/Memory circuit design, custom transistor-level design, simulation, characterization, and PVT analysis . Key Responsibilities Design and develop
SRAM/Memory macros
at transistor and circuit level. Work on
bitcell, sense amplifier, precharge, write driver, decoder, and peripheral circuits . Perform
schematic design, transistor sizing, simulations, and circuit optimization . Analyze
PVT, Monte Carlo, mismatch, variation, leakage, power, and performance . Drive
memory timing, power, stability, and reliability
characterization. Debug circuit-level issues and improve
PPA and yield . Collaborate with
Layout, STA, Verification, and Silicon teams
for memory macro development and signoff. Support
silicon correlation, characterization, and post-silicon debug . Core Technical Skills Strong hands-on experience in
SRAM / Memory circuit design . Expertise in
Cadence Virtuoso
and transistor-level simulation. Strong understanding of
CMOS fundamentals, device physics, and circuit analysis . Experience with
SPICE simulations, PVT corners, Monte Carlo, and statistical analysis . Knowledge of
memory timing, stability, leakage, power, and yield optimization . Exposure to
advanced technology nodes and low-voltage memory design
is a plus. Strong scripting/debugging skills using
Python/Perl/Tcl
is desirable. Qualifications B.E./B.Tech/M.E./M.Tech
in Electrical/Electronics/VLSI or related discipline. 5–10 years
of relevant industry experience in
Memory Design / Custom Circuit Design . Preferred:
Candidates with end-to-end ownership of memory macros from
architecture → circuit design → simulation → characterization → silicon correlation .
Bengaluru Experience:
5–10 Years Job Type:
Full-time Role Overview We are looking for a
Senior Memory Design Engineer
to drive circuit-level design and optimization of advanced memory macros. The role requires strong expertise in
SRAM/Memory circuit design, custom transistor-level design, simulation, characterization, and PVT analysis . Key Responsibilities Design and develop
SRAM/Memory macros
at transistor and circuit level. Work on
bitcell, sense amplifier, precharge, write driver, decoder, and peripheral circuits . Perform
schematic design, transistor sizing, simulations, and circuit optimization . Analyze
PVT, Monte Carlo, mismatch, variation, leakage, power, and performance . Drive
memory timing, power, stability, and reliability
characterization. Debug circuit-level issues and improve
PPA and yield . Collaborate with
Layout, STA, Verification, and Silicon teams
for memory macro development and signoff. Support
silicon correlation, characterization, and post-silicon debug . Core Technical Skills Strong hands-on experience in
SRAM / Memory circuit design . Expertise in
Cadence Virtuoso
and transistor-level simulation. Strong understanding of
CMOS fundamentals, device physics, and circuit analysis . Experience with
SPICE simulations, PVT corners, Monte Carlo, and statistical analysis . Knowledge of
memory timing, stability, leakage, power, and yield optimization . Exposure to
advanced technology nodes and low-voltage memory design
is a plus. Strong scripting/debugging skills using
Python/Perl/Tcl
is desirable. Qualifications B.E./B.Tech/M.E./M.Tech
in Electrical/Electronics/VLSI or related discipline. 5–10 years
of relevant industry experience in
Memory Design / Custom Circuit Design . Preferred:
Candidates with end-to-end ownership of memory macros from
architecture → circuit design → simulation → characterization → silicon correlation .
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